中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

文献类型:期刊论文

作者Denggui Wang; Xingwang Zhang; Heng Liu; Junhua Meng; Jing Xia; Zhigang Yin; Ye Wang; Jingbi You; Xiang-Min Meng
刊名2D Mater
出版日期2017
卷号4页码:031012
学科主题半导体材料
公开日期2018-06-01
源URL[http://ir.semi.ac.cn/handle/172111/28508]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Denggui Wang,Xingwang Zhang,Heng Liu,et al. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors[J]. 2D Mater,2017,4:031012.
APA Denggui Wang.,Xingwang Zhang.,Heng Liu.,Junhua Meng.,Jing Xia.,...&Xiang-Min Meng.(2017).Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors.2D Mater,4,031012.
MLA Denggui Wang,et al."Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors".2D Mater 4(2017):031012.

入库方式: OAI收割

来源:半导体研究所

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