中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

文献类型:期刊论文

作者Zhao, Quan-Zhong; Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo
刊名Chem. Phys. Lett.
出版日期2016
卷号662页码:102
通讯作者zqz@siom.ac.cn
英文摘要We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.
资助信息National Natural Science Foundation of China [61178024, 11374316]
收录类别SCI
WOS记录号WOS:000386860900018
源URL[http://ir.siom.ac.cn/handle/181231/27703]  
专题上海光学精密机械研究所_强场激光物理国家重点实验室
作者单位中国科学院上海光学精密机械研究所
推荐引用方式
GB/T 7714
Zhao, Quan-Zhong,Bai, Feng,Li, Hong-Jin,et al. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon[J]. Chem. Phys. Lett.,2016,662:102.
APA Zhao, Quan-Zhong.,Bai, Feng.,Li, Hong-Jin.,Huang, Yuan-Yuan.,Fan, Wen-Zhong.,...&Li, Yang-Bo.(2016).Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon.Chem. Phys. Lett.,662,102.
MLA Zhao, Quan-Zhong,et al."Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon".Chem. Phys. Lett. 662(2016):102.

入库方式: OAI收割

来源:上海光学精密机械研究所

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