Tailored femtosecond Bessel beams for high-throughput, taper-free through-Silicon vias (TSVs) fabrication
文献类型：会议论文
| 作者 | He, Fei; Yu, Junjie; Chu, Wei; Wang, Zhaohui; Tan, Yuanxin; Cheng, Ya; Sugioka, Koji |
| 出版日期 | 2016 |
| 通讯作者 | ya.cheng@siom.ac.cn ; ksugioka@postman.riken.jp |
| 英文摘要 | For higher-density integration and acceleration of operating speed in Si ICs, 3D integration of wafers and/or dies is essential. Fabrication of current 3D ICs relies on 3D assembly which electrically connects stacked chips to form a single circuit. A key technology for the 3D assembly is TSVs which are vertical electrical connections passing completely through silicon chips to electrically connect vertically assembled Si ICs. Typical TSVs have wide features, with diameters of a range from several microns to 50 mu m and depths up to 500 mu m with aspect ratios up to 15 depending on the application and integration scheme. In this work, we present high-throughput, taper-free TSVs fabrication using femtosecond Bessel beams operated at different wavelengths from 400 nm to 2.4 mu m. Furthermore, special phase filters are designed to suppress the damages induced by the side-lobes of Bessel beams for high-quality TSVs fabrication. Our technique can be potentially used for 3D assembly in manufacture of 3D silicon integrated circuits. |
| 会议录 | LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XXI
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| 语种 | 英语 |
| ISSN号 | 0277-786X |
| 源URL | [http://ir.siom.ac.cn/handle/181231/27376]  |
| 专题 | 上海光学精密机械研究所_强场激光物理国家重点实验室 |
| 推荐引用方式 GB/T 7714 | He, Fei,Yu, Junjie,Chu, Wei,et al. Tailored femtosecond Bessel beams for high-throughput, taper-free through-Silicon vias (TSVs) fabrication[C]. 见:. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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