High-speed maskless nanolithography with visible light based on photothermal localization
文献类型:期刊论文
作者 | Wei, Jingsong; Zhang, Kui; Wei, Tao; Wang, Yang; Wu, Yiqun; Xiao, Mufei |
刊名 | Sci Rep
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出版日期 | 2017 |
卷号 | 7 |
通讯作者 | weijingsong@siom.ac.cn |
英文摘要 | High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (lambda = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 +/- 5 nm, about 1/12 of the diffraction allowed smallest light spot, and the lithography speed reaches 6 +/- 8 m/s, tens of times faster than traditional laser writing methods. The writing resolution is instantaneously tunable by adjusting the laser power. The reason behind the significant breakthrough in terms of writing resolution and speed is found as the concentration of light induced heat. Therefore, the heat spot is far smaller than the light spot, so does the size of the written features. Such a sharp focus of heat occurs only on the selected writing material, and the phenomenon is referred as the photothermal localization response. The physics behind the effect is explained and supported with numerical simulations. |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [51672292, 61627826, 61137002]; PAPIIT-UNAM [IN100514]; UNAM |
WOS记录号 | WOS:000395581600001 |
源URL | [http://ir.siom.ac.cn/handle/181231/28236] ![]() |
专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
作者单位 | 中国科学院上海光学精密机械研究所 |
推荐引用方式 GB/T 7714 | Wei, Jingsong,Zhang, Kui,Wei, Tao,et al. High-speed maskless nanolithography with visible light based on photothermal localization[J]. Sci Rep,2017,7. |
APA | Wei, Jingsong,Zhang, Kui,Wei, Tao,Wang, Yang,Wu, Yiqun,&Xiao, Mufei.(2017).High-speed maskless nanolithography with visible light based on photothermal localization.Sci Rep,7. |
MLA | Wei, Jingsong,et al."High-speed maskless nanolithography with visible light based on photothermal localization".Sci Rep 7(2017). |
入库方式: OAI收割
来源:上海光学精密机械研究所
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