Field-effect transistors of high-mobility few-layer SnSe2
文献类型：期刊论文
| 作者 | Tian, Zhen; Guo, Chenglei; Xue, Jiamin; Mi, Qixi; Xiao, Yanjun |
| 刊名 | Appl. Phys. Lett.
 |
| 出版日期 | 2016 |
| 卷号 | 109期号:20 |
| 通讯作者 | xuejm@shanghaitech.edu.cn |
| 英文摘要 | We report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be similar to 85 cm(2) V-1 s(-1) at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of similar to 10(5). These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials. Published by AIP Publishing. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 |
| WOS记录号 | WOS:000388000000045 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28765]  |
| 专题 | 上海光学精密机械研究所_其他 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Tian, Zhen,Guo, Chenglei,Xue, Jiamin,et al. Field-effect transistors of high-mobility few-layer SnSe2[J]. Appl. Phys. Lett.,2016,109(20). |
| APA | Tian, Zhen,Guo, Chenglei,Xue, Jiamin,Mi, Qixi,&Xiao, Yanjun.(2016).Field-effect transistors of high-mobility few-layer SnSe2.Appl. Phys. Lett.,109(20). |
| MLA | Tian, Zhen,et al."Field-effect transistors of high-mobility few-layer SnSe2".Appl. Phys. Lett. 109.20(2016). |
入库方式： OAI收割
来源：上海光学精密机械研究所
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