Photoemission study of the electronic structure of valence band convergent SnSe
文献类型：期刊论文
| 作者 | Jiang, J.; Wang, C. W.; Xia, Y. Y. Y.; Tian, Z.; Li, B. H.; Cui, S. T.; Yang, H. F.; Liang, A. J.; Zhan, X. Y.; Hong, G. H. |
| 刊名 | Phys. Rev. B
 |
| 出版日期 | 2017 |
| 卷号 | 96期号:16 |
| 通讯作者 | liuzhk@shanghaitech.edu.cn ; yulin.chen@physics.ox.ac.uk |
| 英文摘要 | IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance. The multiple close-to-degenerate (or "convergent") valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe. |
| 收录类别 | SCI |
| 资助信息 | National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] |
| WOS记录号 | WOS:000412700200002 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28771]  |
| 专题 | 上海光学精密机械研究所_其他 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Jiang, J.,Wang, C. W.,Xia, Y. Y. Y.,et al. Photoemission study of the electronic structure of valence band convergent SnSe[J]. Phys. Rev. B,2017,96(16). |
| APA | Jiang, J..,Wang, C. W..,Xia, Y. Y. Y..,Tian, Z..,Li, B. H..,...&Chen, Y. L..(2017).Photoemission study of the electronic structure of valence band convergent SnSe.Phys. Rev. B,96(16). |
| MLA | Jiang, J.,et al."Photoemission study of the electronic structure of valence band convergent SnSe".Phys. Rev. B 96.16(2017). |
入库方式： OAI收割
来源：上海光学精密机械研究所
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