Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
文献类型：期刊论文
| 作者 | Liu XZ(刘兴钊); Yue C(岳超); Zhang WL(张万里); Xia ZT(夏长泰) |
| 刊名 | Chin. Phys. B
 |
| 出版日期 | 2016 |
| 卷号 | 25期号:1 |
| 通讯作者 | xzliu@uestc.edu.cn ; xia_ct@siom.ac.cn |
| 英文摘要 | High-resistivity beta-Ga2O3 thin films were grown on Si-doped n-type conductive beta-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10(6) Omega. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10(18) cm(-3) and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10(2)% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive beta-Ga2O3 thin films and the n-type conductive beta-Ga2O3 single-crystal substrate. |
| 收录类别 | SCI |
| 资助信息 | National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] |
| WOS记录号 | WOS:000368455100068 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28030]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Liu XZ,Yue C,Zhang WL,et al. Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer[J]. Chin. Phys. B,2016,25(1). |
| APA | 刘兴钊,岳超,张万里,&夏长泰.(2016).Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer.Chin. Phys. B,25(1). |
| MLA | 刘兴钊,et al."Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer".Chin. Phys. B 25.1(2016). |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。