中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electroluminescent Properties of WLEDs With the Structures of Ce:YAG Single Crystal/Blue Chip and Sr2Si5N8:Eu2+/Ce:YAG Single Crystal/Blue Chip

文献类型:期刊论文

作者Dong, Yongjun; Shao, Chongyun; Du, Yong; Yang, Qiuhong
刊名J. Disp. Technol.
出版日期2016
卷号12期号:4页码:323
通讯作者dongyj@siom.ac.cn
英文摘要In this work, evidence for matching blue chips with Ce:YAG single crystal phosphor is given. Forward current (I-f) and red phosphor were investigated and discussed to improve the electroluminescent properties of WLEDs using Ce: YAG single-crystal phosphors. Optimum forward current of such a device is chosen at above 45 mA. The structure of Sr2Si5N8:Eu2+ phosphor/Ce:YAG single crystal/blue chip enormously improved the color temperature and color rendering index. This method can be a solution to achieve warm white light. The chromaticity of this structure with the color temperature of 5629 K and color rendering index of 77.1 is (CIE x, CIE y) = (0.3296, 0.3369) is closely meeting the demand for ideal white light for general lighting (0.33, 0.33), but the luminous efficiency (eta(L)) is lower at 81.04 lm/W in comparison to that of the Ce:YAG single crystal/blue chip structure at 94.55 lm/W.
收录类别SCI
WOS记录号WOS:000372745500002
源URL[http://ir.siom.ac.cn/handle/181231/28061]  
专题上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位中国科学院上海光学精密机械研究所
推荐引用方式
GB/T 7714
Dong, Yongjun,Shao, Chongyun,Du, Yong,et al. Electroluminescent Properties of WLEDs With the Structures of Ce:YAG Single Crystal/Blue Chip and Sr2Si5N8:Eu2+/Ce:YAG Single Crystal/Blue Chip[J]. J. Disp. Technol.,2016,12(4):323.
APA Dong, Yongjun,Shao, Chongyun,Du, Yong,&Yang, Qiuhong.(2016).Electroluminescent Properties of WLEDs With the Structures of Ce:YAG Single Crystal/Blue Chip and Sr2Si5N8:Eu2+/Ce:YAG Single Crystal/Blue Chip.J. Disp. Technol.,12(4),323.
MLA Dong, Yongjun,et al."Electroluminescent Properties of WLEDs With the Structures of Ce:YAG Single Crystal/Blue Chip and Sr2Si5N8:Eu2+/Ce:YAG Single Crystal/Blue Chip".J. Disp. Technol. 12.4(2016):323.

入库方式: OAI收割

来源:上海光学精密机械研究所

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