High-power single-chip GaN-based white LED with 3058 lm
文献类型：期刊论文
| 作者 | Ding, Mingdi; Zhang, Yibin; Xu, Jianwei; Zhao, Desheng; Huang, Hongjuan; Xu, Xin; Miao, Zhenlin; He, Peng; Wang, Yanming; Dong, Yongjun |
| 刊名 | Electron. Lett.
 |
| 出版日期 | 2016 |
| 卷号 | 52期号:25页码:2050 |
| 通讯作者 | mdding2014@sinano.ac.cn |
| 英文摘要 | A high-power phosphor-converted white LED with 3058 lm is reported. The high-power white LED was manufactured by utilising a single-blue LED chip with a cerium-doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 x 4.5 mm(2). The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively. |
| 收录类别 | SCI |
| 资助信息 | National Key Scientific Instrument and Equipment Development Projects of China [2013YQ470767] |
| WOS记录号 | WOS:000393749600014 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28099]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Ding, Mingdi,Zhang, Yibin,Xu, Jianwei,et al. High-power single-chip GaN-based white LED with 3058 lm[J]. Electron. Lett.,2016,52(25):2050. |
| APA | Ding, Mingdi.,Zhang, Yibin.,Xu, Jianwei.,Zhao, Desheng.,Huang, Hongjuan.,...&Cai, Yong.(2016).High-power single-chip GaN-based white LED with 3058 lm.Electron. Lett.,52(25),2050. |
| MLA | Ding, Mingdi,et al."High-power single-chip GaN-based white LED with 3058 lm".Electron. Lett. 52.25(2016):2050. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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