Ho:LaF3 single crystal as potential material for 2 mu m and 2.9 mu m lasers
文献类型：期刊论文
| 作者 | Hong, Jiaqi; Zhang, Lianhan; Zhang, Peixiong; Xu, Min; Hang, Yin |
| 刊名 | Infrared Phys. Technol.
 |
| 出版日期 | 2016 |
| 卷号 | 76页码:636 |
| 通讯作者 | minxu@siom.ac.cn ; yhang@siom.ac.cn |
| 英文摘要 | Optical properties of a Ho-doped LaF3 single crystal have been detailed investigated as a promising material for 2 mu m and 2.9 mu m lasers for the first time. Judd-Ofelt theory was applied to analyze the absorption spectrum to determine the J-O intensity parameters Omega(t(t=2,4,6)), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the I-5(7) -> I-5(8) and I-5(6) -> I-5(7) transitions were obtained by using the Fuchtbauer-Ladenburg method. The gain cross-section for 2 mu m emission becomes positive once the population inversion level reaches 30%. The Ho:LaF3 crystal shows long fluorescence lifetime of I-5(7) manifold (25.81 ms) as well as I-5(6) manifold (10.37 ms) compared with other Ho3+-doped crystals. It can be proposed that the Ho:LaF3 crystal may be a promising material for 2 mu m and 2.9 mu m laser applications. (C) 2016 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [51302283, 51502321]; Shanghai Natural Science Foundation [13ZR1463400] |
| WOS记录号 | WOS:000377725100079 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28101]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Hong, Jiaqi,Zhang, Lianhan,Zhang, Peixiong,et al. Ho:LaF3 single crystal as potential material for 2 mu m and 2.9 mu m lasers[J]. Infrared Phys. Technol.,2016,76:636. |
| APA | Hong, Jiaqi,Zhang, Lianhan,Zhang, Peixiong,Xu, Min,&Hang, Yin.(2016).Ho:LaF3 single crystal as potential material for 2 mu m and 2.9 mu m lasers.Infrared Phys. Technol.,76,636. |
| MLA | Hong, Jiaqi,et al."Ho:LaF3 single crystal as potential material for 2 mu m and 2.9 mu m lasers".Infrared Phys. Technol. 76(2016):636. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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