Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal
文献类型:期刊论文
作者 | Chen, Zhe; Yang, Lei; Hang, Yin; Wang, Xiangyong |
刊名 | J. Alloy. Compd.
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出版日期 | 2016 |
卷号 | 661页码:62 |
通讯作者 | zhenzhe1201@sina.com |
英文摘要 | Highly transparent Tm3+ doped terbium gallium garnet single crystal was grown by the Czochralski(Cz) method for magneto-optical applications. The single-crystal X-ray diffraction confirms that the compound crystallize in the cubic systems with the structure a = b = c = 1.2338 nm. The temperature dependence of the magnetic susceptibility indicates that the Tm:TGG crystal exhibits paramagnetic behavior over the experimental temperature-range 10-300 K. Transmittance spectra and the Faraday rotation have been investigated, which demonstrates that the as-grown crystal shows a high visible transparency and yields a lager Faraday rotation comparable to that of TGG crystal. The increasing of the Verdet constant at measured wavelength and high thermal property show the superior characteristics of Tm3+ doped TGG compared to the pure TGG, indicating that it has significant development for magneto-active materials used in Faraday devices at visible and near-infrared regions (VIS-NIR). (C) 2015 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
资助信息 | Nature Science Foundation of China [51472257] |
WOS记录号 | WOS:000367521200010 |
源URL | [http://ir.siom.ac.cn/handle/181231/28105] ![]() |
专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
作者单位 | 中国科学院上海光学精密机械研究所 |
推荐引用方式 GB/T 7714 | Chen, Zhe,Yang, Lei,Hang, Yin,et al. Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal[J]. J. Alloy. Compd.,2016,661:62. |
APA | Chen, Zhe,Yang, Lei,Hang, Yin,&Wang, Xiangyong.(2016).Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal.J. Alloy. Compd.,661,62. |
MLA | Chen, Zhe,et al."Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal".J. Alloy. Compd. 661(2016):62. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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