中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal

文献类型:期刊论文

作者Chen, Zhe; Yang, Lei; Hang, Yin; Wang, Xiangyong
刊名J. Alloy. Compd.
出版日期2016
卷号661页码:62
通讯作者zhenzhe1201@sina.com
英文摘要Highly transparent Tm3+ doped terbium gallium garnet single crystal was grown by the Czochralski(Cz) method for magneto-optical applications. The single-crystal X-ray diffraction confirms that the compound crystallize in the cubic systems with the structure a = b = c = 1.2338 nm. The temperature dependence of the magnetic susceptibility indicates that the Tm:TGG crystal exhibits paramagnetic behavior over the experimental temperature-range 10-300 K. Transmittance spectra and the Faraday rotation have been investigated, which demonstrates that the as-grown crystal shows a high visible transparency and yields a lager Faraday rotation comparable to that of TGG crystal. The increasing of the Verdet constant at measured wavelength and high thermal property show the superior characteristics of Tm3+ doped TGG compared to the pure TGG, indicating that it has significant development for magneto-active materials used in Faraday devices at visible and near-infrared regions (VIS-NIR). (C) 2015 Elsevier B.V. All rights reserved.
收录类别SCI
资助信息Nature Science Foundation of China [51472257]
WOS记录号WOS:000367521200010
源URL[http://ir.siom.ac.cn/handle/181231/28105]  
专题上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位中国科学院上海光学精密机械研究所
推荐引用方式
GB/T 7714
Chen, Zhe,Yang, Lei,Hang, Yin,et al. Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal[J]. J. Alloy. Compd.,2016,661:62.
APA Chen, Zhe,Yang, Lei,Hang, Yin,&Wang, Xiangyong.(2016).Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal.J. Alloy. Compd.,661,62.
MLA Chen, Zhe,et al."Improving characteristic of Faraday effect based on the Tm3+ doped terbium gallium garnet single crystal".J. Alloy. Compd. 661(2016):62.

入库方式: OAI收割

来源:上海光学精密机械研究所

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