Interface characterization of Mo/Si multilayers
文献类型:期刊论文
作者 | Wang B(王斌); Zhao JL(赵娇玲); He HB(贺洪波); Wang H(王虎); Yi K(易葵); Cui Y(崔云) |
刊名 | Chin. Opt. Lett.
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出版日期 | 2016 |
卷号 | 14期号:8 |
通讯作者 | hbhe@siom.ac.cn |
英文摘要 | Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi2. Considering MoSi2 as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm. |
收录类别 | SCI |
资助信息 | International Science & Technology Cooperation Program of China [2012DFG51590]; National Natural Science Foundation of China [11304328] |
WOS记录号 | WOS:000382513100022 |
源URL | [http://ir.siom.ac.cn/handle/181231/28116] ![]() |
专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
作者单位 | 中国科学院上海光学精密机械研究所 |
推荐引用方式 GB/T 7714 | Wang B,Zhao JL,He HB,et al. Interface characterization of Mo/Si multilayers[J]. Chin. Opt. Lett.,2016,14(8). |
APA | 王斌,赵娇玲,贺洪波,王虎,易葵,&崔云.(2016).Interface characterization of Mo/Si multilayers.Chin. Opt. Lett.,14(8). |
MLA | 王斌,et al."Interface characterization of Mo/Si multilayers".Chin. Opt. Lett. 14.8(2016). |
入库方式: OAI收割
来源:上海光学精密机械研究所
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