中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interface characterization of Mo/Si multilayers

文献类型:期刊论文

作者Wang B(王斌); Zhao JL(赵娇玲); He HB(贺洪波); Wang H(王虎); Yi K(易葵); Cui Y(崔云)
刊名Chin. Opt. Lett.
出版日期2016
卷号14期号:8
通讯作者hbhe@siom.ac.cn
英文摘要Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi2. Considering MoSi2 as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm.
收录类别SCI
资助信息International Science & Technology Cooperation Program of China [2012DFG51590]; National Natural Science Foundation of China [11304328]
WOS记录号WOS:000382513100022
源URL[http://ir.siom.ac.cn/handle/181231/28116]  
专题上海光学精密机械研究所_中科院强激光材料重点实验室
作者单位中国科学院上海光学精密机械研究所
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GB/T 7714
Wang B,Zhao JL,He HB,et al. Interface characterization of Mo/Si multilayers[J]. Chin. Opt. Lett.,2016,14(8).
APA 王斌,赵娇玲,贺洪波,王虎,易葵,&崔云.(2016).Interface characterization of Mo/Si multilayers.Chin. Opt. Lett.,14(8).
MLA 王斌,et al."Interface characterization of Mo/Si multilayers".Chin. Opt. Lett. 14.8(2016).

入库方式: OAI收割

来源:上海光学精密机械研究所

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