Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation
文献类型：期刊论文
| 作者 | Zhao, Jiaoling; Wang, Hu; Shao, Jianda; Qi, Hongji; Wang, Bin |
| 刊名 | Opt. Commun.
 |
| 出版日期 | 2017 |
| 卷号 | 387页码:214 |
| 通讯作者 | qhj@siom.ac.cn |
| 英文摘要 | Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China, China [61308021] |
| WOS记录号 | WOS:000390597300035 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28206]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Zhao, Jiaoling,Wang, Hu,Shao, Jianda,et al. Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation[J]. Opt. Commun.,2017,387:214. |
| APA | Zhao, Jiaoling,Wang, Hu,Shao, Jianda,Qi, Hongji,&Wang, Bin.(2017).Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation.Opt. Commun.,387,214. |
| MLA | Zhao, Jiaoling,et al."Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation".Opt. Commun. 387(2017):214. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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