Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
文献类型：期刊论文
| 作者 | Guo, Chenglei; Tian, Zhen; Xue, Jiamin; Li, Ranran; Zhao, Mingxing |
| 刊名 | ACS Nano
 |
| 出版日期 | 2017 |
| 卷号 | 11期号:2页码:2219 |
| 通讯作者 | xuejm@shanghaitech.edu.cn |
| 英文摘要 | We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross Hall-bar structure are fabricated. They show heavily hole-doped (similar to 10(19) cm(-3)) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm(2) V-1 s(-1), which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be similar to 45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity. |
| 资助信息 | National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] |
| 收录类别 | SCI |
| WOS记录号 | WOS:000395357300118 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/28777]  |
| 专题 | 上海光学精密机械研究所_其他 |
| 作者单位 | 中国科学院上海光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Guo, Chenglei,Tian, Zhen,Xue, Jiamin,et al. Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy[J]. ACS Nano,2017,11(2):2219. |
| APA | Guo, Chenglei,Tian, Zhen,Xue, Jiamin,Li, Ranran,&Zhao, Mingxing.(2017).Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy.ACS Nano,11(2),2219. |
| MLA | Guo, Chenglei,et al."Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy".ACS Nano 11.2(2017):2219. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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