The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals
文献类型：期刊论文
| 作者 | Zheng, Daoyuan1,2; Zhang, Mingxing1,3; Zhao, Guangjiu1,3 |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2017-11-07 |
| 卷号 | 19期号:41页码:28175-28181 |
| 英文摘要 | Herein, the promotion effects of thionation and isomerization on the carrier mobility properties of naphthalene diimide and thionated naphthalene diimide crystals were investigated in detail based on the Marcus-Hush theory and quantum-chemical calculations. The thionation of NDIs will improve the charge mobility of both electrons and holes, which is similar to the thionation of PDIs. The compound P only behaves as an n-type organic semiconductor (OSC), whereas the three other thionation structures have higher mobility values and can behave as p-type OSCs. For the cis/trans isomers of the two double-thionation structures, trans-S2 has a larger hole and electron carrier mobility than cis-S2; this is consistent with the experimental results obtained for cis-trans-isomers. A potential strategy for the development of high performance ambipolar OSCs is the substitution of O atoms by S atoms. These results will provide a guide for the design and optimization of OSCs via analysis of the relationship between carrier mobility and molecular crystal structures. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Chemistry, Physical ; Physics, Atomic, Molecular & Chemical |
| 研究领域[WOS] | Chemistry ; Physics |
| 关键词[WOS] | FIELD-EFFECT TRANSISTORS ; THIN-FILM TRANSISTORS ; ORGANIC SEMICONDUCTORS ; N-TYPE ; ISOMERICALLY PURE ; ELECTRONEGATIVE OLIGOTHIOPHENES ; ELECTRONIC COUPLINGS ; TRANSPORT PROPERTIES ; DYNAMIC DISORDER ; HOLE MOBILITIES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000413778800029 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/149725]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China 2.Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci,Inst Chem, Tianjin 300072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Daoyuan,Zhang, Mingxing,Zhao, Guangjiu. The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2017,19(41):28175-28181. |
| APA | Zheng, Daoyuan,Zhang, Mingxing,&Zhao, Guangjiu.(2017).The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,19(41),28175-28181. |
| MLA | Zheng, Daoyuan,et al."The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 19.41(2017):28175-28181. |
入库方式： OAI收割
来源：大连化学物理研究所
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