Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
文献类型：期刊论文
| 作者 | Ajayan, Pulickel M.1; Lu, Guangyuan1,2,3,4; Wu, Tianru2,3; Yang, Peng5; Yang, Yingchao1; Jin, Zehua1; Chen, Weibing1; Jia, Shuai1; Wang, Haomin2,3; Zhang, Guanhua6 |
| 刊名 | ADVANCED SCIENCE
 |
| 出版日期 | 2017-09-01 |
| 卷号 | 4期号:9 |
| 关键词 | chemical vapor deposition Cu-Ni alloy graphene and h-BN in-plane heterostructures high quality |
| 英文摘要 | Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 关键词[WOS] | CHEMICAL-VAPOR-DEPOSITION ; BAND-GAP ; ATMOSPHERIC-PRESSURE ; STACKED GRAPHENE ; GROWTH ; FILMS ; INTERFACE ; DOMAINS ; LAYERS ; FOILS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000411148100015 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/150181]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China 5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China 7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ajayan, Pulickel M.,Lu, Guangyuan,Wu, Tianru,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9). |
| APA | Ajayan, Pulickel M..,Lu, Guangyuan.,Wu, Tianru.,Yang, Peng.,Yang, Yingchao.,...&Jiang, Mianheng.(2017).Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.ADVANCED SCIENCE,4(9). |
| MLA | Ajayan, Pulickel M.,et al."Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy".ADVANCED SCIENCE 4.9(2017). |
入库方式： OAI收割
来源：大连化学物理研究所
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