Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides
文献类型：期刊论文
| 作者 | Le Huang; Lin Tao; Kai Gong; Yongtao Li; Huafeng Dong; Zhongming Wei; Jingbo Li |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2017 |
| 卷号 | 95期号:20页码:205303 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28560]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Le Huang,Lin Tao,Kai Gong,et al. Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides[J]. PHYSICAL REVIEW B,2017,95(20):205303. |
| APA | Le Huang.,Lin Tao.,Kai Gong.,Yongtao Li.,Huafeng Dong.,...&Jingbo Li.(2017).Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides.PHYSICAL REVIEW B,95(20),205303. |
| MLA | Le Huang,et al."Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides".PHYSICAL REVIEW B 95.20(2017):205303. |
入库方式： OAI收割
来源：半导体研究所
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