Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
文献类型：期刊论文
| 作者 | Xiao-Xi Li; Zhi-Qiang Fan; Pei-Zhi Liu; Mao-Lin Chen; Xin Liu; Chuan-Kun Jia; Dong-Ming Sun; Xiang-Wei Jiang; Zheng Han; Vincent Bouchiat |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2017 |
| 卷号 | 8期号:1页码:970 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28570]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiao-Xi Li,Zhi-Qiang Fan,Pei-Zhi Liu,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE COMMUNICATIONS,2017,8(1):970. |
| APA | Xiao-Xi Li.,Zhi-Qiang Fan.,Pei-Zhi Liu.,Mao-Lin Chen.,Xin Liu.,...&Zhi-Dong Zhang.(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE COMMUNICATIONS,8(1),970. |
| MLA | Xiao-Xi Li,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE COMMUNICATIONS 8.1(2017):970. |
入库方式： OAI收割
来源：半导体研究所
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