Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction
文献类型：期刊论文
| 作者 | Hongjuan Wang; Genquan Han; Xiangwei Jiang; Yan Liu; Chunfu Zhang; Jincheng Zhang; and Yue Hao |
| 刊名 | Japanese Journal of Applied Physics
 |
| 出版日期 | 2017 |
| 卷号 | 56期号:4页码:04CD07 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28555]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hongjuan Wang,Genquan Han,Xiangwei Jiang,et al. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction[J]. Japanese Journal of Applied Physics,2017,56(4):04CD07. |
| APA | Hongjuan Wang.,Genquan Han.,Xiangwei Jiang.,Yan Liu.,Chunfu Zhang.,...&and Yue Hao.(2017).Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction.Japanese Journal of Applied Physics,56(4),04CD07. |
| MLA | Hongjuan Wang,et al."Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction".Japanese Journal of Applied Physics 56.4(2017):04CD07. |
入库方式： OAI收割
来源：半导体研究所
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