中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes

文献类型:期刊论文

作者Yuexi Lyu; Xi Han; Yaoyao Sun; Zhi Jiang; Chunyan Guo; Wei Xiang; Yinan Dong; Jie Cui; Yuan Yao; Dongwei Jiang
刊名Journal of Crystal Growth
出版日期2017
卷号482页码:70–74
学科主题半导体物理
公开日期2018-06-15
源URL[http://ir.semi.ac.cn/handle/172111/28592]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Yuexi Lyu,Xi Han,Yaoyao Sun,et al. Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes[J]. Journal of Crystal Growth,2017,482:70–74.
APA Yuexi Lyu.,Xi Han.,Yaoyao Sun.,Zhi Jiang.,Chunyan Guo.,...&Yingqiang Xu.(2017).Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes.Journal of Crystal Growth,482,70–74.
MLA Yuexi Lyu,et al."Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes".Journal of Crystal Growth 482(2017):70–74.

入库方式: OAI收割

来源:半导体研究所

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