Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice
文献类型：期刊论文
| 作者 | Han Bi; Xi Han; Lu Liu; Yunhao Zhao; Xuebing Zhao; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Yi Shi; Renchao Che |
| 刊名 | ACS Applied Materials & Interfaces
 |
| 出版日期 | 2017 |
| 卷号 | 9页码:26642−26647 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28614]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Han Bi,Xi Han,Lu Liu,et al. Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice[J]. ACS Applied Materials & Interfaces,2017,9:26642−26647. |
| APA | Han Bi.,Xi Han.,Lu Liu.,Yunhao Zhao.,Xuebing Zhao.,...&Renchao Che.(2017).Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice.ACS Applied Materials & Interfaces,9,26642−26647. |
| MLA | Han Bi,et al."Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice".ACS Applied Materials & Interfaces 9(2017):26642−26647. |
入库方式： OAI收割
来源：半导体研究所
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