1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
文献类型：期刊论文
| 作者 | Yongzhou Xue; Zesheng Chen; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun |
| 刊名 | Appl. Phys. Lett.
 |
| 出版日期 | 2017 |
| 卷号 | 111页码:182102 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28617]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yongzhou Xue,Zesheng Chen,Haiqiao Ni,et al. 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K[J]. Appl. Phys. Lett.,2017,111:182102. |
| APA | Yongzhou Xue.,Zesheng Chen.,Haiqiao Ni.,Zhichuan Niu.,Desheng Jiang.,...&Baoquan Sun.(2017).1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K.Appl. Phys. Lett.,111,182102. |
| MLA | Yongzhou Xue,et al."1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K".Appl. Phys. Lett. 111(2017):182102. |
入库方式： OAI收割
来源：半导体研究所
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