Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy
文献类型：期刊论文
| 作者 | Lixia Li; Dong Pan; Yongzhou Xue; Xiaolei Wang; Miaoling Lin; Dan Su; Qinglin Zhang; Xuezhe Yu; Hyok So; Dahai Wei |
| 刊名 | Nano Letters
 |
| 出版日期 | 2017 |
| 卷号 | 17页码:622−630 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-07-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28663]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Lixia Li,Dong Pan,Yongzhou Xue,et al. Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,17:622−630. |
| APA | Lixia Li.,Dong Pan.,Yongzhou Xue.,Xiaolei Wang.,Miaoling Lin.,...&Jianhua Zhao.(2017).Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,17,622−630. |
| MLA | Lixia Li,et al."Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters 17(2017):622−630. |
入库方式： OAI收割
来源：半导体研究所
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