Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications
文献类型：期刊论文
| 作者 | Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang |
| 刊名 | Superlattices and Microstructures
 |
| 出版日期 | 2017 |
| 卷号 | 111页码:286-292 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-07-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28695]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Suyuan Wang,Jun Zheng,Chunlai Xue,et al. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications[J]. Superlattices and Microstructures,2017,111:286-292. |
| APA | Suyuan Wang.,Jun Zheng.,Chunlai Xue.,Chuanbo Li.,Yuhua Zuo.,...&Qiming Wang.(2017).Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications.Superlattices and Microstructures,111,286-292. |
| MLA | Suyuan Wang,et al."Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications".Superlattices and Microstructures 111(2017):286-292. |
入库方式： OAI收割
来源：半导体研究所
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