Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy
文献类型：期刊论文
| 作者 | JUN ZHENG; SUYUAN WANG; HUI CONG; COLLEEN S. FENRICH; ZHI LIU; CHUNLAI XUE; CHUANBO LI; YUHUA ZUO; BUWEN CHENG; JAMES S. HARRIS |
| 刊名 | Letter
 |
| 出版日期 | 2017 |
| 卷号 | 42期号:8页码:1608-1611 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-07-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28736]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | JUN ZHENG,SUYUAN WANG,HUI CONG,et al. Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy[J]. Letter,2017,42(8):1608-1611. |
| APA | JUN ZHENG.,SUYUAN WANG.,HUI CONG.,COLLEEN S. FENRICH.,ZHI LIU.,...&AND QIMING WANG.(2017).Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy.Letter,42(8),1608-1611. |
| MLA | JUN ZHENG,et al."Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy".Letter 42.8(2017):1608-1611. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。