Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes
文献类型：期刊论文
| 作者 | Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang; Ping Chen; Jian Jun Zhu; Zong Shun Liu; Jing Yang; Wei Liu |
| 刊名 | Phys. Status Solidi A
 |
| 出版日期 | 2017 |
| 卷号 | 214期号:10页码:1700320 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-07-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28771]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yao Xing,De Gang Zhao,De Sheng Jiang,et al. Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes[J]. Phys. Status Solidi A,2017,214(10):1700320. |
| APA | Yao Xing.,De Gang Zhao.,De Sheng Jiang.,Xiang Li.,Feng Liang.,...&Mo Li.(2017).Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes.Phys. Status Solidi A,214(10),1700320. |
| MLA | Yao Xing,et al."Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes".Phys. Status Solidi A 214.10(2017):1700320. |
入库方式： OAI收割
来源：半导体研究所
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