Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition
文献类型：期刊论文
| 作者 | Hong-Yan Chen; Hong-Liang Lu; Jin-Xin Chen; Feng Zhang; Xin-Ming Ji; Wen-Jun Liu; Xiao-Feng Yang; David Wei Zhang |
| 刊名 | ACS Applied Materials & Interfaces
 |
| 出版日期 | 2017 |
| 卷号 | 9期号:44页码:38662-38669 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28596]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hong-Yan Chen,Hong-Liang Lu,Jin-Xin Chen,et al. Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition[J]. ACS Applied Materials & Interfaces,2017,9(44):38662-38669. |
| APA | Hong-Yan Chen.,Hong-Liang Lu.,Jin-Xin Chen.,Feng Zhang.,Xin-Ming Ji.,...&David Wei Zhang.(2017).Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition.ACS Applied Materials & Interfaces,9(44),38662-38669. |
| MLA | Hong-Yan Chen,et al."Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition".ACS Applied Materials & Interfaces 9.44(2017):38662-38669. |
入库方式： OAI收割
来源：半导体研究所
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