Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films
文献类型:期刊论文
作者 | Xiaomeng Zhao; Yang Zhang; Min Guan; Lijie Cui; Baoqiang Wang; Zhanping Zhu; Yiping Zeng |
刊名 | Journal of Crystal Growth |
出版日期 | 2017 |
卷号 | 470页码:1–7 |
学科主题 | 半导体材料 |
公开日期 | 2018-06-15 |
源URL | [http://ir.semi.ac.cn/handle/172111/28595] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Xiaomeng Zhao,Yang Zhang,Min Guan,et al. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films[J]. Journal of Crystal Growth,2017,470:1–7. |
APA | Xiaomeng Zhao.,Yang Zhang.,Min Guan.,Lijie Cui.,Baoqiang Wang.,...&Yiping Zeng.(2017).Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films.Journal of Crystal Growth,470,1–7. |
MLA | Xiaomeng Zhao,et al."Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films".Journal of Crystal Growth 470(2017):1–7. |
入库方式: OAI收割
来源:半导体研究所
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