中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

文献类型:期刊论文

作者Xiaomeng Zhao; Yang Zhang; Min Guan; Lijie Cui; Baoqiang Wang; Zhanping Zhu; Yiping Zeng
刊名Journal of Crystal Growth
出版日期2017
卷号470页码:1–7
学科主题半导体材料
公开日期2018-06-15
源URL[http://ir.semi.ac.cn/handle/172111/28595]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Xiaomeng Zhao,Yang Zhang,Min Guan,et al. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films[J]. Journal of Crystal Growth,2017,470:1–7.
APA Xiaomeng Zhao.,Yang Zhang.,Min Guan.,Lijie Cui.,Baoqiang Wang.,...&Yiping Zeng.(2017).Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films.Journal of Crystal Growth,470,1–7.
MLA Xiaomeng Zhao,et al."Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films".Journal of Crystal Growth 470(2017):1–7.

入库方式: OAI收割

来源:半导体研究所

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