A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian; W. S. Zhao; L. Wang; M. Guan; F. Zhang; G. S. Sun |
| 刊名 | ECS Journal of Solid State Science and Technology
 |
| 出版日期 | 2017 |
| 卷号 | 6期号:1页码:27-31 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-06-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28600]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | X. F. Liu,z G. G. Yan,Z. W. Shen,et al. A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition[J]. ECS Journal of Solid State Science and Technology,2017,6(1):27-31. |
| APA | X. F. Liu.,z G. G. Yan.,Z. W. Shen.,Z. X.Wen.,L. X. Tian.,...&Y. P. Zeng.(2017).A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition.ECS Journal of Solid State Science and Technology,6(1),27-31. |
| MLA | X. F. Liu,et al."A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition".ECS Journal of Solid State Science and Technology 6.1(2017):27-31. |
入库方式： OAI收割
来源：半导体研究所
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