中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal

文献类型:期刊论文

作者Dou, Renqin1,2; Liu, Wenpeng1; Zhang, Qi3; Zhang, Qingli1; Ding, Shoujun1; Shi, Zibin4; Sun, Dunlu1; Wang, Jiyang5
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2017
卷号123期号:1
DOI10.1007/s00339-016-0611-9
文献子类Article
英文摘要A new piezoelectric single crystal La3Ga4.85Fe0.15SiO14 (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k(eff) of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm(-3) by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H2SO4 etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and epsilon(11), epsilon(33), d(11), and d(14) are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense.
WOS关键词CZOCHRALSKI GROWTH ; LANGASITE STRUCTURE ; ELASTIC PROPERTIES ; LA3GA5SIO14 LGS ; LA3GA5.5NB0.5O14
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000391433400001
资助机构National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; National Natural Science Foundation of China(51272254 ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-15M055) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206) ; 61405206)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/31725]  
专题合肥物质科学研究院_中科院安徽光学精密机械研究所
作者单位1.Chinese Acad Sci, Key Lab Photon Devices & Mat, Anhui Inst Opt & Fine Mech, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Anhui Firesky Crystal Sci & Technol Co Ltd, Tongling 244000, Peoples R China
4.26th Inst China Elect Technol Grp Corp, Chongqing 400060, Peoples R China
5.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
推荐引用方式
GB/T 7714
Dou, Renqin,Liu, Wenpeng,Zhang, Qi,et al. Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2017,123(1).
APA Dou, Renqin.,Liu, Wenpeng.,Zhang, Qi.,Zhang, Qingli.,Ding, Shoujun.,...&Wang, Jiyang.(2017).Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,123(1).
MLA Dou, Renqin,et al."Growth and characterization of the La3Ga4.85Fe0.15SiO14 piezoelectric single crystal".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 123.1(2017).

入库方式: OAI收割

来源:合肥物质科学研究院

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