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Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining

文献类型：期刊论文

作者Li, Jingwei1; Ban, Boyuan1; Li, Yanlei1; Bai, Xiaolong2; Zhang, Taotao1; Chen, Jian1
刊名SILICON
出版日期2017
卷号9期号:1页码:77-83
关键词Ga-si Alloy Metallurgical Grade Silicon Solvent Refining Impurities
DOI10.1007/s12633-014-9269-0
文献子类Article
英文摘要Purification of metallurgical grade silicon (MG-Si), using gallium as the impurity getter has been investigated. The technique involves growing Si dendrites from an alloy of MG-Si with Ga, followed by their separation by acid leaching. The morphologies of impurity phases in the MG-Si and the Ga-Si alloy were investigated during the solvent refining process. Effective segregation ratios of B and P in the Ga-Si system were calculated. Most metallic impurities formed silicides, such as Si-Fe-Ga-Mn or Si-Fe-Ga impurity phases, which segregated to the grain boundaries of Si or into the Ga phase during the Ga-Si solvent refining process. After purification, the refined Si is plate-like with <111> crystallographic orientation, and the removal fraction of B and P was 83.28 % and 14.84 % respectively when the Si proportion was 25 % in the Ga-Si alloy. The segregation ratios of B and P were determined to be 0.15 and 0.83 when the solid fraction of Si was 0.25. The effective removal of B and P by a solidification refining process with a Ga-Si melt is clarified.
WOS关键词AL-SI ; SOLAR-CELL ; PURIFICATION ; SOLIDIFICATION ; GROWTH ; COPPER ; IRON
WOS研究方向Chemistry ; Materials Science
语种英语
WOS记录号WOS:000383859900011
资助机构National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/24728]  
专题合肥物质科学研究院_中科院等离子体物理研究所
作者单位1.Chinese Acad Sci, Inst Plasma Phys, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
2.China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Li, Jingwei,Ban, Boyuan,Li, Yanlei,et al. Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining[J]. SILICON,2017,9(1):77-83.
APA Li, Jingwei,Ban, Boyuan,Li, Yanlei,Bai, Xiaolong,Zhang, Taotao,&Chen, Jian.(2017).Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining.SILICON,9(1),77-83.
MLA Li, Jingwei,et al."Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining".SILICON 9.1(2017):77-83.

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来源：合肥物质科学研究院

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