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Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering

文献类型：期刊论文

作者Wu, Yecun1,2; Fuh, Huei-Ru3; Zhang, Duan1,2; Coileain, Cormac O.2,4,5; Xu, Hongjun2; Cho, Jiung6; Choi, Miri7; Chung, Byong Sun8; Jiang, Xuju9; Abid, Mourad2
刊名NANO ENERGY
出版日期2017-02-01
卷号32期号:无页码:157-164
关键词Gase Strain Engineering Piezoptics Exciton Photoluminescence
DOI10.1016/j.nanoen.2016.12.034
文献子类Article
英文摘要For applications in wearable human-device interfaces and optoelectronics, flexible materials capable of supporting spatial and uninterrupted bandgap tunability are of immense value. We demonstrate theoretically and experimentally the wide bandgap tunability of GaSe nanosheets, with simultaneous PL enhancement, via elastic strain engineering at room temperature. The elastic strain gives rise to a continuously variable electronic band structure profile, with a rate of 40 meV/1%, and a 3-fold enhancement in PL intensity is achieved when a uniaxial strain of 1% is introduced. An additional effect is that a new exciton state arises when the strain is raised beyond 0.6%. This work suggests that strain engineering can effectively modulate/control the generation, separation, transport, and recombination of photo-induced charge carriers in GaSe, making it a valuable material for flexible optoelectronic-mechanical applications.
WOS关键词GALLIUM SELENIDE ; GRAPHENE ; CRYSTALS ; MOS2 ; HETEROSTRUCTURES ; OPTOELECTRONICS ; GENERATION ; ANISOTROPY ; MONOLAYER ; EFFICIENT
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000397003700018
资助机构Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Beijing Institute of Technology Research Fund Program for Young Scholars ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398) ; Saudi Aramco(6600028398)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/31754]  
专题合肥物质科学研究院_中科院等离子体物理研究所
作者单位1.Capital Normal Univ, Elementary Educ Coll, Beijing Key Lab Nanophoton & Nanostruct, Beijing 100048, Peoples R China
2.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
3.Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
4.Trin Coll Dublin, Sch Phys, Dublin 2, Ireland
5.Trin Coll Dublin, CRANN, Dublin 2, Ireland
6.Korea Basic Sci Inst, Western Seoul Ctr, Seoul 03579, South Korea
7.Korea Basic Sci Inst, Chuncheon Ctr, Chunchon 24341, South Korea
8.Korea Res Inst Stand & Sci, Div Ind Metrol, Daejeon 305340, South Korea
9.Bruker Beijing Sci Technol Co Ltd, Beijing 100081, Peoples R China
10.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Yecun,Fuh, Huei-Ru,Zhang, Duan,et al. Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering[J]. NANO ENERGY,2017,32(无):157-164.
APA Wu, Yecun.,Fuh, Huei-Ru.,Zhang, Duan.,Coileain, Cormac O..,Xu, Hongjun.,...&Wu, Han-Chun.(2017).Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering.NANO ENERGY,32(无),157-164.
MLA Wu, Yecun,et al."Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering".NANO ENERGY 32.无(2017):157-164.

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来源：合肥物质科学研究院

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