Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation
文献类型：期刊论文
| 作者 | Gang He1,3; Jiangwei Liu2; Hanshuang Chen1; Yanmei Liu1; Zhaoqi Sun1; Xiaoshuang Chen3; Mao Liu4 ; Lide Zhang4
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| 刊名 | J. Mater. Chem. C
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| 出版日期 | 2014 |
| 卷号 | 2期号:27页码:5299-5308 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/20763]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, P.R. China. 2.Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. 3.National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, P.R. China 4.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, P.R. China |
| 推荐引用方式 GB/T 7714 | Gang He,Jiangwei Liu,Hanshuang Chen,et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation[J]. J. Mater. Chem. C,2014,2(27):5299-5308. |
| APA | Gang He.,Jiangwei Liu.,Hanshuang Chen.,Yanmei Liu.,Zhaoqi Sun.,...&Lide Zhang.(2014).Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation.J. Mater. Chem. C,2(27),5299-5308. |
| MLA | Gang He,et al."Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation".J. Mater. Chem. C 2.27(2014):5299-5308. |
入库方式： OAI收割
来源：合肥物质科学研究院
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