Interface optimization and modification of band offsets of ALD-derived Al2O3/HfO2/Al2O3/Ge gate stacks by annealing temperature
文献类型：期刊论文
| 作者 | H.H. Wei1; G. He1,2; J. Gao3; M. Liu4; X.S. Chen2; Z.Q. Sun1 |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2014 |
| 卷号 | 615期号:无页码:672-675 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/20764]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China 2.National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, China 3.School of Sciences, Anhui University of Science and Technology, Huainan 232001, China 4.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
| 推荐引用方式 GB/T 7714 | H.H. Wei,G. He,J. Gao,et al. Interface optimization and modification of band offsets of ALD-derived Al2O3/HfO2/Al2O3/Ge gate stacks by annealing temperature[J]. Journal of Alloys and Compounds,2014,615(无):672-675. |
| APA | H.H. Wei,G. He,J. Gao,M. Liu,X.S. Chen,&Z.Q. Sun.(2014).Interface optimization and modification of band offsets of ALD-derived Al2O3/HfO2/Al2O3/Ge gate stacks by annealing temperature.Journal of Alloys and Compounds,615(无),672-675. |
| MLA | H.H. Wei,et al."Interface optimization and modification of band offsets of ALD-derived Al2O3/HfO2/Al2O3/Ge gate stacks by annealing temperature".Journal of Alloys and Compounds 615.无(2014):672-675. |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。