Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer
文献类型：期刊论文
| 作者 | L. Hu1; X. Luo1; K. J. Zhang1; X. W. Tang1; L. Zu1; X. C. Kan1; L. Chen1; X. B. Zhu1; W. H. Song1; J. M. Dai1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 105期号:11页码:1-4 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/20792]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China 2.High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China 3.Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | L. Hu,X. Luo,K. J. Zhang,et al. Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer[J]. APPLIED PHYSICS LETTERS,2014,105(11):1-4. |
| APA | L. Hu.,X. Luo.,K. J. Zhang.,X. W. Tang.,L. Zu.,...&Y. P. Sun.(2014).Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer.APPLIED PHYSICS LETTERS,105(11),1-4. |
| MLA | L. Hu,et al."Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer".APPLIED PHYSICS LETTERS 105.11(2014):1-4. |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。