Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices
文献类型：期刊论文
| 作者 | Cao YF(曹玉飞)1 ; Cai KM(蔡凯明)1; Li MJ(黎明君)2; Lu WJ(鲁文建)2; Sun YP(孙玉平)2; Wang KY(王开友)1
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| 刊名 | Chin. Phys. Lett.
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| 出版日期 | 2014 |
| 卷号 | 31期号:7页码:1-4 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/20989]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
| 推荐引用方式 GB/T 7714 | Cao YF,Cai KM,Li MJ,et al. Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices[J]. Chin. Phys. Lett.,2014,31(7):1-4. |
| APA | Cao YF,Cai KM,Li MJ,Lu WJ,Sun YP,&Wang KY.(2014).Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices.Chin. Phys. Lett.,31(7),1-4. |
| MLA | Cao YF,et al."Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices".Chin. Phys. Lett. 31.7(2014):1-4. |
入库方式： OAI收割
来源：合肥物质科学研究院
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