Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd
文献类型：期刊论文
| 作者 | Baojin Ren1; Mian Liu1; Xiaoguang Li2,3; Xiaoying Qin1 ; Di Li1; Tianhua Zou1; Guolong Sun1; Yuanyue Li1; Hongxing Xin1; Jian Zhang1
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| 刊名 | J. Mater. Chem. A,
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| 出版日期 | 2015 |
| 卷号 | 3期号:22页码:11768-11772 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/21332]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Science, 230031 Hefei, P. R. China. 2.Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, 230026 Hefei, P. R. China 3.Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
| 推荐引用方式 GB/T 7714 | Baojin Ren,Mian Liu,Xiaoguang Li,et al. Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd[J]. J. Mater. Chem. A,,2015,3(22):11768-11772. |
| APA | Baojin Ren.,Mian Liu.,Xiaoguang Li.,Xiaoying Qin.,Di Li.,...&Jian Zhang.(2015).Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd.J. Mater. Chem. A,,3(22),11768-11772. |
| MLA | Baojin Ren,et al."Enhancement of thermoelectric performance of beta-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd".J. Mater. Chem. A, 3.22(2015):11768-11772. |
入库方式： OAI收割
来源：合肥物质科学研究院
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