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  4. 中科院固体物理研究所
Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method

文献类型：期刊论文

作者Jin, P.1; He, G.1; Wang, P. H.1; Liu, M.2; Xiao, D. Q.1; Gao, J.1; Chen, H. S.1; Chen, X. S.3; Sun, Z. Q.1; Zhang, M.1
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2016-12-15
卷号688期号:无页码:925-932
关键词High-k Gate Dielectrics Hftiox Thin Films Sol-gel Processing Optical Properties Electrical Properties
DOI10.1016/j.jallcom.2016.07.261
文献子类Article
英文摘要Deposition of HfTiOx gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfTiOx thin films as a function of baking temperature have been investigated. The components and optical properties of HfTiOx thin films related to baking temperature are investigated by energy dispersive spectrometer (EDS), ultraviolete-visible spectroscopy (UV-Vis), and spectroscopy ellipsometry (SE). By measurement of EDS, the Hf/Ti molar ratio of HfTiOx thin films is calculated to be about 1: 1.20 at all baking temperature. The increase in band gap is observed with the increase of baking temperature. Additionally, the electrical properties based on Al/Si/HfTiOx/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 200 degrees C-baked sample demonstrates good electrical performance, including larger dielectric constant of 23.31 and lower leakage current density of 5.12 x 10(-)5 A/cm(2) at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of baking temperatures are also discussed systematically. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词HFO2 THIN-FILMS ; INTERFACIAL PROPERTIES ; STACKS ; MICROSTRUCTURE ; DEPENDENCE ; TI
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000384439000117
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22012]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Shanghai Inst Tech Phys, Chinese Acad Sci, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
4.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
推荐引用方式
GB/T 7714		 Jin, P.,He, G.,Wang, P. H.,et al. Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,688(无):925-932.
APA Jin, P..,He, G..,Wang, P. H..,Liu, M..,Xiao, D. Q..,...&Liu, Y. M..(2016).Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method.JOURNAL OF ALLOYS AND COMPOUNDS,688(无),925-932.
MLA Jin, P.,et al."Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method".JOURNAL OF ALLOYS AND COMPOUNDS 688.无(2016):925-932.

入库方式： OAI收割

来源：合肥物质科学研究院

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