中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Field-induced dielectric response saturation in o-TaS3

文献类型:期刊论文

作者Ma, Yongchang1,2,3; Lu, Cuimin1,4; Wang, Xuewei1; Du, Xueli1; Li, Lijun2,5; Petrovic, Cedomir2
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2016-10-01
卷号28期号:39页码:1-7
关键词Dielectric Constant Tunnelling Soliton
DOI10.1088/0953-8984/28/39/395901
文献子类Article
英文摘要We investigated dependence of the dielectric properties on temperature and electric field below 50 K along the chain direction of o-TaS3. With external electric field increase, two threshold features could be identified. For electric fields somewhat larger than the lower threshold E-T', the dielectric constant starts to decrease whereas the conductivity increases due to the tunnelling of solitons. For higher external electric field we observe a saturation of dielectric response and analyze that the possible reasons may be related to the polarization behavior of charged solitons. With a decrease in temperature, the effect of external field on the dielectric response of the system weakens gradually and at 13 K it diminishes due to soliton freezing.
WOS关键词CHARGE-DENSITY-WAVE ; LOW-TEMPERATURE ; CONDUCTIVITY ; CRYSTALS ; CREATION ; TAS3
WOS研究方向Physics
语种英语
WOS记录号WOS:000383803700018
资助机构National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; National Science Foundation of China(10704054) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704) ; US DOE(DE-SC00112704)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22079]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
2.Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
3.Tianjin Univ Technol, Minist Educ, Key Lab Display Mat & Photoelect Devices, Tianjin 300384, Peoples R China
4.Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China
5.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Ma, Yongchang,Lu, Cuimin,Wang, Xuewei,et al. Field-induced dielectric response saturation in o-TaS3[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2016,28(39):1-7.
APA Ma, Yongchang,Lu, Cuimin,Wang, Xuewei,Du, Xueli,Li, Lijun,&Petrovic, Cedomir.(2016).Field-induced dielectric response saturation in o-TaS3.JOURNAL OF PHYSICS-CONDENSED MATTER,28(39),1-7.
MLA Ma, Yongchang,et al."Field-induced dielectric response saturation in o-TaS3".JOURNAL OF PHYSICS-CONDENSED MATTER 28.39(2016):1-7.

入库方式: OAI收割

来源:合肥物质科学研究院

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