Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application
文献类型：期刊论文
| 作者 | Dongqi Xiao1; Gang He1; Zhaoqi Sun1; Jianguo Lv2; Peng Jin1; Changyong Zheng1; Mao Liu3
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| 刊名 | CERAMICS INTERNATIONAL
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| 出版日期 | 2016 |
| 卷号 | 42期号:1页码:759-766 |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/22137]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China 2.Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China 3.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
| 推荐引用方式 GB/T 7714 | Dongqi Xiao,Gang He,Zhaoqi Sun,et al. Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application[J]. CERAMICS INTERNATIONAL,2016,42(1):759-766. |
| APA | Dongqi Xiao.,Gang He.,Zhaoqi Sun.,Jianguo Lv.,Peng Jin.,...&Mao Liu.(2016).Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application.CERAMICS INTERNATIONAL,42(1),759-766. |
| MLA | Dongqi Xiao,et al."Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application".CERAMICS INTERNATIONAL 42.1(2016):759-766. |
入库方式： OAI收割
来源：合肥物质科学研究院
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