中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 合肥物质科学研究院
  3. 中国科学院合肥物质科学研究院
  4. 中科院固体物理研究所
Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films

文献类型：期刊论文

作者Jiang, S. S.1; He, G.1,4; Gao, J.1,2; Xiao, D. Q.1; Jin, P.1; Li, W. D.1; Lv, J. G.3; Liu, M.4; Liu, Y. M.1; Sun, Z. Q.1
刊名CERAMICS INTERNATIONAL
出版日期2016-08-01
卷号42期号:10页码:11640-11649
关键词Electrical Properties High-k Gate Dielectrics Metal-oxide-semiconductor Conduction Mechanisms Sputtering
DOI10.1016/j.ceramint.2016.04.067
文献子类Article
英文摘要The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV-vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance-voltage (C-V) and leakage current density-voltage (J-V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70 eV, leakage current density of 1.39 x 10(-5) A/cm(2) at bias voltage of 2 V, and total positive charge density and border trap charge density of 9.16 x 10(11) cm(-2) and 1.3 x 10(11) cm(-2), respectively render HfTiO thin films deposited at 0.6 Pa, potential high-k gate dielectrics in future CMOS devices. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
WOS关键词ANNEALING TEMPERATURE ; PHYSICAL-PROPERTIES ; BAND ALIGNMENT ; HFO2 ; MODULATION ; CAPACITORS ; STACKS ; TIO2
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000377733500018
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22138]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
3.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Jiang, S. S.,He, G.,Gao, J.,et al. Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films[J]. CERAMICS INTERNATIONAL,2016,42(10):11640-11649.
APA Jiang, S. S..,He, G..,Gao, J..,Xiao, D. Q..,Jin, P..,...&Sun, Z. Q..(2016).Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films.CERAMICS INTERNATIONAL,42(10),11640-11649.
MLA Jiang, S. S.,et al."Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films".CERAMICS INTERNATIONAL 42.10(2016):11640-11649.

入库方式： OAI收割

来源：合肥物质科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。