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Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure

文献类型：期刊论文

作者Gao, J.1; He, G.1; Deng, B.1; Xiao, D. Q.1; Liu, M.2; Jin, P.1; Zheng, C. Y.1; Sun, Z. Q.1
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2016-03-25
卷号662期号:无页码:339-347
关键词Hfo2 Thin Films Rf Sputtering Optical Properties Band Gap Wettability
DOI10.1016/j.jallcom.2015.12.080
文献子类Article
英文摘要The effect of oxygen partial pressure on the microstructure, wettability, optical and electrical properties of sputtering-derived HfO2 thin films has been systematically investigated by using x-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM), atomic force microscope (AFM), UV-visible spectroscopy (UV-Vis), spectroscopy ellipsometry (SE), and electrical measurements. XRD results have shown that the HfO2 thin films are all polycrystalline with monoclinic phase. Based on analysis from FTIR, a strong absorption peak centered at 1105 cm(-1) has been detected, indicating the formation of the interfacial layer. Reduction in particle size and decrease in root mean square (RMS) roughness of the HfO2 thin films have been detected by SEM and AFM measurements with the increase in oxygen partial pressure. Meanwhile, the contact angle decreases and the wettability increases with increasing the oxygen partial pressure. Combined with UV-vis and SE, the optical function of HfO2 thin films as functions of oxygen partial pressure has been determined. By means of electrical measurements, evolution of electrical performance of MOS capacitor based on HfO2 gate dielectrics related with oxygen partial pressure has been investigated systematically. (C) 2015 Elsevier B.V. All rights reserved.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; SPUTTERED HAFNIUM OXIDE ; GATE DIELECTRICS ; RATIO ; MODULATION ; COATINGS ; LAYER
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000368336200046
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; 51472003)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22140]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Gao, J.,He, G.,Deng, B.,et al. Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,662(无):339-347.
APA Gao, J..,He, G..,Deng, B..,Xiao, D. Q..,Liu, M..,...&Sun, Z. Q..(2016).Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure.JOURNAL OF ALLOYS AND COMPOUNDS,662(无),339-347.
MLA Gao, J.,et al."Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure".JOURNAL OF ALLOYS AND COMPOUNDS 662.无(2016):339-347.

入库方式： OAI收割

来源：合肥物质科学研究院

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