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  4. 中科院固体物理研究所
Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics

文献类型：期刊论文

作者Zheng, C. Y.1; He, G.1; Chen, X. F.1; Liu, M.2; Lv, J. G.3; Gao, J.1; Zhang, J. W.1; Xiao, D. Q.1; Jin, P.1; Jiang, S. S.1
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2016-09-15
卷号679期号:无页码:115-121
关键词Band Offset Hfo2/ingazno4 Heterojunctions X-ray Photoelectron Spectroscopy Thin Film Transistors Electrical Properties Mos Capacitor
DOI10.1016/j.jallcom.2016.04.025
文献子类Article
英文摘要High-k HfOxNy and HfO2 have been applied to amorphous InGaZnO (a-IGZO) metal-oxide-semiconductor (MOS) capacitors as high-k gate dielectrics by using radio-frequency sputtering at room temperature. Effects of nitrogen incorporation on the optical band gap, band alignment and electrical properties of HfOxNy/IGZO/Si gate stacks have been systematically investigated by spectroscopic ellipsometry (SE), UV-vis spectroscopy, x-ray photoemission spectroscopy (XPS) and electrical measurements. Experimental results have confirmed the successful incorporation of nitrogen into HfO2 films and reduction in band gap with the incorporation of nitrogen for HfOxNy thin films. Reduction in valence band offset and increase in conduction band offset have been observed for HfOxNy/IGZO gate stack. Electrical properties measurements for a-IGZO MOS capacitors based on HfOxNy gate dielectrics have indicated that nitrogen incorporation leads to the improved interface quality, increased dielectric constant, reduced hysteresis voltage, and decreased leakage current density. Meanwhile, the leakage current mechanism under gate injection for MOS capacitors based on HfO2 and HfOxNy high-k gate dielectrics has been investigated systematically. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词THIN-FILM TRANSISTORS ; TEMPERATURE ; DEPOSITION ; LAYER ; STACK
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000376104900016
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Technology Foundation for Selected Overseas Chinese Scholar ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22143]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
3.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
推荐引用方式
GB/T 7714		 Zheng, C. Y.,He, G.,Chen, X. F.,et al. Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,679(无):115-121.
APA Zheng, C. Y..,He, G..,Chen, X. F..,Liu, M..,Lv, J. G..,...&Sun, Z. Q..(2016).Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics.JOURNAL OF ALLOYS AND COMPOUNDS,679(无),115-121.
MLA Zheng, C. Y.,et al."Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics".JOURNAL OF ALLOYS AND COMPOUNDS 679.无(2016):115-121.

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来源：合肥物质科学研究院

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