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  4. 中科院固体物理研究所
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

文献类型：期刊论文

作者Xiao, D. Q.1; He, G.1; Liu, M.2; Gao, J.1,3; Jin, P.1; Jiang, S. S.1; Li, W. D.1; Zhang, M.1; Liu, Y. M.1; Lv, J. G.4
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2016-12-15
卷号688期号:无页码:252-259
关键词High-k Gate Dielectrics Optical Constant Electrical Properties Ti incorporaTion Sol-gel Conduction Mechanisms
DOI10.1016/j.jallcom.2016.07.179
文献子类Article
英文摘要In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO2 doped ZrO2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO2 doped ZrO2 is up to 600 degrees C. The transmittance and band gap value of the ZrTiOx film were about 75% and 4.0 eV, respectively. 300 degrees C-annealed ZrTiOx MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7 x 10(-4) A/cm(2) were obtained. The dominant conduction mechanisms of Al/ZrTiO4/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result, it can be concluded that sol-gel derived ZrTiOx gate dielectric displays potential application as is a promising candidate in future MOS electronic devices. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词OXIDE THIN-FILMS ; MOS CAPACITORS ; SI ; DEPENDENCE ; DEPOSITION ; STACKS ; PLASMA ; CHARGE
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000384439000034
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22145]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
4.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China
推荐引用方式
GB/T 7714		 Xiao, D. Q.,He, G.,Liu, M.,et al. Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,688(无):252-259.
APA Xiao, D. Q..,He, G..,Liu, M..,Gao, J..,Jin, P..,...&Sun, Z. Q..(2016).Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature.JOURNAL OF ALLOYS AND COMPOUNDS,688(无),252-259.
MLA Xiao, D. Q.,et al."Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature".JOURNAL OF ALLOYS AND COMPOUNDS 688.无(2016):252-259.

入库方式： OAI收割

来源：合肥物质科学研究院

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