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  4. 中科院固体物理研究所
Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric

文献类型：期刊论文

作者Ma, Rui1,2; Liu, Mao1,2; He, Gang3; Fang, Ming1,2; Shang, Guoliang1,2; Fei, Guangtao1,2; Zhang, Lide1,2
刊名JOURNAL OF APPLIED PHYSICS
出版日期2016-06-07
卷号119期号:21页码:1-5
DOI10.1063/1.4953144
文献子类Article
英文摘要HfGdON thin films with different N concentrations have been deposited on Si ( 100) substrates using a radio frequency magnetron sputtering by changing the flow rate of N-2 during deposition. Results have indicated that N doping could partly suppress the formation of the low-k SiOx interfacial layer in the interfacial region, which induces the evolution of the composition of interfacial layer changes from SiOx to the mixture of SiOx and silicate. Reduction in band gap and valence band offset and increment in conduction band offset have been detected with the increase of N doping content. Moreover, the best electrical properties including the highest dielectric constant (similar to 21.69), no obvious Delta V-fb as well as the lowest leakage current density have been obtained with HfGdON films deposited at a N-2 flow rate of 7 sccm. It can be concluded that N doping content should be carefully controlled to meet the best performance requirement for future complementary metal-oxide-semiconductor device. Published by AIP Publishing.
WOS关键词THERMAL-STABILITY ; FILMS ; PHOTOEMISSION ; GD
WOS研究方向Physics
语种英语
WOS记录号WOS:000378923100016
资助机构National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; 51572002 ; 51572002 ; 51572002 ; 51572002 ; 11404341) ; 11404341) ; 11404341) ; 11404341) ; National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Basic Research Program of China(2012CB932303) ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; National Natural Science Foundation of China(11474284 ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; 51572002 ; 51572002 ; 51572002 ; 51572002 ; 11404341) ; 11404341) ; 11404341) ; 11404341)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/22478]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
3.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714		 Ma, Rui,Liu, Mao,He, Gang,et al. Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric[J]. JOURNAL OF APPLIED PHYSICS,2016,119(21):1-5.
APA Ma, Rui.,Liu, Mao.,He, Gang.,Fang, Ming.,Shang, Guoliang.,...&Zhang, Lide.(2016).Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric.JOURNAL OF APPLIED PHYSICS,119(21),1-5.
MLA Ma, Rui,et al."Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric".JOURNAL OF APPLIED PHYSICS 119.21(2016):1-5.

入库方式： OAI收割

来源：合肥物质科学研究院

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