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Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films

文献类型：期刊论文

作者Wu, H. Y.1; Wang, W.2; Lu, W. J.2
刊名PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
出版日期2016-09-01
卷号253期号:9页码:1855-1860
关键词Amorphous Ge2sb2te5 Electrical Transport Phase Change Memories Variable Range Hopping
DOI10.1002/pssb.201600045
文献子类Article
英文摘要We study the electrical transport mechanism of amorphous Ge2Sb2Te5 (GST) phase-change memory material. Amorphous GST films with 10-100 nm thicknesses were fabricated in tri-layer geometry by using metal top and bottom electrodes. The temperature and voltage bias dependences of the electrical conductance were measured and analyzed using different models. Thermally activated conductance was observed at high temperatures. The estimated activation energy E-a and carrier density n were 0.36-0.45 eV and similar to 10(18) cm(-3), respectively. With a de-crease in temperature, variable-range-hopping (VRH) conductivity was induced in moderate temperature range (150-250 K), which was associated with the diffusive regime. At low temperatures (T < 50 K), electrical transport occurred predominantly by inelastic hopping through directed chains of localized states. The localized electronic states of amorphous GST were observed experimentally by our tunneling density-of-states (DOS) measurements. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WOS关键词PHASE-CHANGE MEMORIES ; THIN-FILMS ; RESISTANCE MEASUREMENTS ; ELECTRONIC-PROPERTIES ; CONDUCTION ; GLASSES ; MEDIA ; FIELD
WOS研究方向Physics
语种英语
WOS记录号WOS:000383605400023
资助机构Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/30162]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Modern Expt Technol Ctr, Hefei 230039, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Wu, H. Y.,Wang, W.,Lu, W. J.. Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2016,253(9):1855-1860.
APA Wu, H. Y.,Wang, W.,&Lu, W. J..(2016).Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,253(9),1855-1860.
MLA Wu, H. Y.,et al."Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253.9(2016):1855-1860.

入库方式： OAI收割

来源：合肥物质科学研究院

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