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Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack

文献类型：期刊论文

作者Gao, Juan1,2; He, Gang1; Zhang, Jiwen1; Chen, Xuefei1; Jin, Peng1; Xiao, Dongqi1; Liu, Mao3; Ma, Rui3; Sun, Zhaoqi1
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
出版日期2016-08-01
卷号16期号:8页码:8075-8082
关键词High-k Gate Dielectric Atomic Layer Deposition Electrical Properties Leakage Current Mechanism
DOI10.1166/jnn.2016.12791
文献子类Article
英文摘要A set of HfO2 and HfAlO films have been fabricated by using atomic layer deposition (ALD). A comparative study about the effect of post-deposition annealing temperature on electrical characteristics in HfO2/n-Si and HfAlO/n-Si gate stacks has been presented. Compared to HfO2 samples, HfAlO samples show better performance in dielectric and interfacial properties. Electrical measurement confirmed that the HfAlO/n-Si sample annealed at 400 degrees C exhibit the lowest density of oxide charge (Q(ox)) of 0.9x10(12) cm(-2), interface charge density (D-it) of 4.0x10(12) cm(-2) eV(-1), and border trapped oxide charge density (N-bt) of 0.17x10(11) cm(-2). The leakage current at applied substrate voltage of 2 V is 3.14x10(-5) A/cm(2), and the dielectric constant is 15.2. In addition, the leakage current mechanism for both HfO2 and HfAlO at different annealing temperature has been investigated systematically. The result reveals Schottky emission and Poole-Frenkle (P-F) emission are main conduction mechanism in common at the low electric field, and direct tunneling (D-T) is the conduction mechanism at the high field, respectively.
WOS关键词PULSED-LASER DEPOSITION ; DIELECTRICS ; OXIDE ; CAPACITORS ; SILICON ; FILMS
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000387083900046
资助机构National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/30178]  
专题合肥物质科学研究院_中科院固体物理研究所
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Gao, Juan,He, Gang,Zhang, Jiwen,et al. Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016,16(8):8075-8082.
APA Gao, Juan.,He, Gang.,Zhang, Jiwen.,Chen, Xuefei.,Jin, Peng.,...&Sun, Zhaoqi.(2016).Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,16(8),8075-8082.
MLA Gao, Juan,et al."Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16.8(2016):8075-8082.

入库方式： OAI收割

来源：合肥物质科学研究院

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