The group VA element non-compensated n-p codoping in CuGaS2 for intermediate band materials
文献类型：期刊论文
| 作者 | Han, Miaomiao1,2; Zhang, Xiaoli1 ; Zhang, Yongsheng1; Zeng, Z.1,2
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| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2016 |
| 卷号 | 144期号:无页码:664-670 |
| 关键词 | Solar Energy Intermediate Band Band Structure Density Of States Optical Absorption Phase Stability Formation Energy |
| DOI | 10.1016/j.solmat.2015.10.011 |
| 文献子类 | Article |
| 英文摘要 | Noncompensated n-p codoping by different element combinations has proven to be an effective approach to create intermediate bands (IBs) in wide band gap semiconductors. Here, we present a new noncompensated n-p codoping case by simultaneously substitute the cation and anion pair with the same element, which is implemented by using group VA element codoped CuGaS2 systems, within first-principles calculations. The results suggest that the M (N, P, As or Sb) element substitutional codoping on Ga and S sites will introduce partially filled and isolated IBs in the band gap, and that the optical absorption is enhanced in all of the M codoped systems compared with the host CuGaS2, due to the additional electron transition though IB. However, the stability analysis suggest that only P, As and Sb can enable stable IB material growth, and N will decompose the compound into more stable binary phase. Hence, M (P, As or Sb) codoped CuGaS2 materials are predicted as promising candidates in photovoltaic applications. Besides, the codoping method may also be used in other functional materials to obtain controllable doping. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS关键词 | SPECTRUM SOLAR ABSORPTION ; OPTICAL-PROPERTIES ; PHOTOVOLTAIC MATERIAL ; ELECTRONIC-STRUCTURE ; VISIBLE-LIGHT ; CHALCOPYRITE ; CELLS ; EFFICIENCY ; SEMICONDUCTORS ; 1ST-PRINCIPLES |
| WOS研究方向 | Energy & Fuels ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000366223900084 |
| 资助机构 | special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; NSFC(11204310 ; NSFC(11204310 ; NSFC(11204310 ; NSFC(11204310 ; U1230202) ; U1230202) ; U1230202) ; U1230202) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; special Funds for Major State Basic Research Project of China (973)(2012CB933702) ; NSFC(11204310 ; NSFC(11204310 ; NSFC(11204310 ; NSFC(11204310 ; U1230202) ; U1230202) ; U1230202) ; U1230202) |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/30225]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, Miaomiao,Zhang, Xiaoli,Zhang, Yongsheng,et al. The group VA element non-compensated n-p codoping in CuGaS2 for intermediate band materials[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2016,144(无):664-670. |
| APA | Han, Miaomiao,Zhang, Xiaoli,Zhang, Yongsheng,&Zeng, Z..(2016).The group VA element non-compensated n-p codoping in CuGaS2 for intermediate band materials.SOLAR ENERGY MATERIALS AND SOLAR CELLS,144(无),664-670. |
| MLA | Han, Miaomiao,et al."The group VA element non-compensated n-p codoping in CuGaS2 for intermediate band materials".SOLAR ENERGY MATERIALS AND SOLAR CELLS 144.无(2016):664-670. |
入库方式： OAI收割
来源：合肥物质科学研究院
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