Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications
文献类型:期刊论文
作者 | Hu, L.1; Lin, G. T.1; Luo, X.1; Wei, R. H.1; Zhu, X. B.1; Song, W. H.1; Dai, J. M.1; Sun, Y. P.1,2,3 |
刊名 | JOURNAL OF APPLIED PHYSICS |
出版日期 | 2016-12-07 |
卷号 | 120期号:21页码:1-6 |
DOI | 10.1063/1.4971762 |
文献子类 | Article |
英文摘要 | La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (I-R) as a function of the third harmonic coefficient (B-0) caused by Joule heating during the reset process shows scaling behavior with a power law of I-R proportional to B-0(-delta). The I-R and reset power (P-R) can also be scaled to the resistance in LRS (R-0), i.e., I-R(P-R) proportional to R-0(-alpha(beta)). The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device. Published by AIP Publishing. |
WOS关键词 | OXIDE-ION CONDUCTORS ; CRYSTAL-STRUCTURE ; CONDUCTIVITY ; DEVICE |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000390602600033 |
资助机构 | National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/30262] |
专题 | 合肥物质科学研究院_中科院固体物理研究所 |
作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China |
推荐引用方式 GB/T 7714 | Hu, L.,Lin, G. T.,Luo, X.,et al. Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications[J]. JOURNAL OF APPLIED PHYSICS,2016,120(21):1-6. |
APA | Hu, L..,Lin, G. T..,Luo, X..,Wei, R. H..,Zhu, X. B..,...&Sun, Y. P..(2016).Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications.JOURNAL OF APPLIED PHYSICS,120(21),1-6. |
MLA | Hu, L.,et al."Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications".JOURNAL OF APPLIED PHYSICS 120.21(2016):1-6. |
入库方式: OAI收割
来源:合肥物质科学研究院
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