Terahertz conductivities of VO2 thin films grown under different sputtering gas pressures
文献类型：期刊论文
| 作者 | Y.Y. Luo1; F.H. Su1; S.S. Pan1; S.C. Xu1; C. Zhang1; J. Pan1; J.M. Dai1; P. Li2; G.H. Li1,3 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2016 |
| 卷号 | 655期号:无页码:442-447 |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/30605]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 作者单位 | 1.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China 2.High Magnetic Field Laboratory, Chinese Academy of Science, Hefei, 230031 Anhui, PR China 3.School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, PR China |
| 推荐引用方式 GB/T 7714 | Y.Y. Luo,F.H. Su,S.S. Pan,et al. Terahertz conductivities of VO2 thin films grown under different sputtering gas pressures[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,655(无):442-447. |
| APA | Y.Y. Luo.,F.H. Su.,S.S. Pan.,S.C. Xu.,C. Zhang.,...&G.H. Li.(2016).Terahertz conductivities of VO2 thin films grown under different sputtering gas pressures.JOURNAL OF ALLOYS AND COMPOUNDS,655(无),442-447. |
| MLA | Y.Y. Luo,et al."Terahertz conductivities of VO2 thin films grown under different sputtering gas pressures".JOURNAL OF ALLOYS AND COMPOUNDS 655.无(2016):442-447. |
入库方式： OAI收割
来源：合肥物质科学研究院
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